1 to-220f item symbol ratings unit remarks drain-source voltage v ds 450 v dsx 450 continuous drain current i d 6 pulsed drain current i d(puls] 24 gate-source voltage v gs 30 repetitive or non-repetitive i ar 6 non-repetitive maximum avalanche energy e as 320 repetitive maximum avalanche energy 3.2 maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 maximum power dissipation p d 2.16 32 operating and storage t ch +150 temperature range t stg isolation voltage v iso *6 2 electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3915-01MR fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators dc-dc converters ups (uninterruptible power supply) maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =450v v gs =0v v ds =360v v gs =0v v gs =30v i d =3a v gs =10v i d =3a v ds =25v v cc =300v i d =3a v gs =10v r gs =10 v v a ma na s pf nc v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 3.906 58.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd v sd t rr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =225v i d =6a v gs =10v i f =6a v gs =0v t ch =25c i f =6a v gs =0v -di/dt=100a/ s t ch =25c v v a a v a mj mj kv/ s kv/ s w w c c kvrms 450 3.0 5.0 25 2.0 100 0.98 1.20 2.5 5 440 660 67 100 2.8 4.5 12 18 6.5 10 25 38 5.5 8.5 15.5 23.5 6.8 10.5 3.7 5.5 1.00 1.50 300 2.0 -55 to +150 outline drawings [mm] equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series 200509 = < v gs =-30v note *1 note *2 note *3 vds 450v note *4 ta=25 c tc=25 c t=60sec, f=60hz http://www.fujielectric.co.jp/fdt/scd/ = < = < note *1 tch 150c note *2 starting tch=25c, i as =6a, l=102mh, v cc =45v, r g =50 e as limited by maximum channel temperrature and avalanche current. see to ?avalanche energy? graph. note *3 repetitve rating : pulse width limited by maximum channel temperature. see to ?transient thermal impedance? graph. note *4 i f -i d , -di/dt=50a/ s, vcc bv dss , tch 150c = < = < = <
2 characteristics 2SK3915-01MR fuji power mosfet 0 25 50 75 100 125 150 0 10 20 30 40 50 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 7.0v 20v 10v 8.0v 6.5v 6.0v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c vgs=5.5v 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0.01 0.1 1 10 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.1 1 10 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 024681012 0.0 0.5 1.0 1.5 2.0 2.5 3.0 8v rds(on) [ ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 6.0v 6.5v 7.0v vgs=5.5v -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 rds(on) [ ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=3a,vgs=10v
3 2SK3915-01MR fuji power mosfet -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250ua vgs(th) [v] tch [ c] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20 qg [nc] typical gate charge characteristics vgs=f(qg):id=3a,tch=25 c vgs [v] 360v 225v vcc= 90v 10 -1 10 0 10 1 10 2 10 3 1p 10p 100p 1n 10n c [f] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 typical switching characteristics vs. id t=f(id):vcc=300v,vgs=10v,rg=10 td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 100 200 300 400 500 i as =2.4a i as =6a i as =3.6a e as [mj] starting tch [ c] maximum avalanche energy vs. starting tch e as =f(starting tch):vcc=45v
4 2SK3915-01MR fuji power mosfet http://www.fujielectric.co.jp/fdt/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=45v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [ o c/w] t [sec]
|
